€2,749.00*
- 2.5% advance payment discount
- If you use the payment method in advance by bank transfer, 2.5% of the purchase amount will be automatically deducted at the checkout.
In Stock, Delivery time: 1 - 3 days
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- Demo device available: Would you like to test the device? Ask us, we offer you the opportunity to test the device for up to 2 weeks.
Description
The SigOFIT MOIP200P (MOIP02P) fibre optic isolated probe allows the measurement of low and high voltages with a bandwidth of 200 MHz and a common mode of up to 60 kVpk. For example, a gate signal on a high-side FET or IGBT can be measured at 600 V or even 1200 V.
With Micsig's exclusive SigOFIT™ optical isolation technology, the SigOFIT probe is powered by a laser and delivers extremely high CMRR and isolation voltage, unlike conventional differential probes that can only test high voltage signals.unlike conventional differential probes that can only test high voltage signals, the SigOFIT probe can be used with different attenuation peaks to test differential signals with voltage ranges from ±1.25V to ±6250V, achieving a full measurement range and a very high signal-to-noise ratio. Third-generation semiconductor devices such as SiC and GaN can switch high voltages in a few nanoseconds, which contain very high-energy, high-frequency harmonics. With the use of high quality coaxial attenuation tips and industry standard MCX & MMCX connectors, SigOFIT probes perfectly suppress oscillations caused by high frequency common mode noise. Automatic calibration is completed in less than 1 second and ensures accurate signal output in real time.
In addition, the MOIP200P probe has a very low input impedance of < 3 pF, a very high common mode rejection ratio of up to 122 dB and a very accurate DC gain of 1 %.
Features
- Supports all BNC oscilloscopes
- Exchangeable attenuation tips
- Gain function 0dB/20db to measure small signals
- 200 MHz bandwidth
- 180 dB CMRR at DC
- over 122 dB CMRR at 200 MHz
- 60 kVpk common mode voltage range
- Up to ±6250V differential input voltage range
- 1% DC gain accuracy
- Autozero in less than 1 second
Application areas
- Design of motor drives and power converters
- Design of GaN, SiC, half/full bridge devices
- Design of inverters, UPS and switching power supplies
- Safety testing for high voltages and high bandwidths
- Evaluation of power devices
- Current shunt measurements
- EMI and ESD troubleshooting
- Floating measurements
Further information

CMRR
The SigOFIT probe has a high common mode rejection ratio (CMRR) of up to 128dB at 100MHz and over 108dB at 1GHz.

GaN suitable
The Micsig SigOFIT probes were developed specifically for GaN and similar applications. To meet the high requirements, the measuring leads are short and the input capacitance is less than 3pF input capacitance.

High accuracy
The SigOFIT probe has excellent amplitude-frequency characteristics and the accuracy of the DC gain is better than 1 %. The maximum noise floor within the range is <450μVrms, and the zero drift is less than 500 μV after warm-up.

For third generation semiconductors
SiC and GaN devices can switch high voltages in a few nanoseconds and the signal can exhibit high-energy, high-frequency harmonics.
Technical Data
Model comparison | MOIP100P | MOIP200P | MOIP350P | MOIP500P | MOIP800P | MOIP1000P |
---|---|---|---|---|---|---|
Bandwidth | 100 MHz | 200 MHz | 350 MHz | 500 MHz | 800 MHz | 1GHz |
Rise time | ≤3.5 ns | ≤1.75 ns | ≤1ns | ≤700 HP | ≤438ps | ≤350 HP |
SMA input impedance | 1MΩ; || 10pF | 1MΩ; || 10pF | 1MΩ; || 10pF | 1MΩ; || 10pF | 1MΩ; || 10pF | 1MΩ; || 10pF |
Output voltage | ±1,25V | ±1,25V | ±0,5V | ±0,5V | ±0,5V | ±0,5V |
Differential voltage ranges | 20X: ±25V 50X: ±62.5V 200X: ±250 V1000X: ±1250V 2000X: ±2500V 5000X: ±6250V | 20X: ±25V 50X: ±62.5V 200X: ±250 V1000X: ±1250V 2000X: ±2500V 5000X: ±6250V | 20X: ±25V 50X: ±62.5V 200X: ±250V 1000X: ±1250V 2000X: ±2500V 5000X: ±6250V | 20X: ±10V 50X: ±25V 100X: ±50V2000X: ±1000V 5000X: ±2500V 10000X: ±5000V | 20X: ±10V 50X: ±25V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V 10000X: ±5000V | 20X: ±10V 50X: ±25V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V 10000X: ±5000V |
Noise | <450μVrms | <450μVrms | <450μVrms | <450μVrms | <450μVrms | <450μVrms |
Propagation delay | 15.42 ns (2 m cable length) | 15.42 ns (2 m cable length) | 15.42 ns (2 m cable length) | 15.42 ns (2 m cable length) | 15.42 ns (2 m cable length) | 15.42 ns (2 m cable length) |
Power supply | USB type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V |
DC amplification accuracy | 1 % | 1 % | 1 % | 1 % | 1 % | 1 % |
Common mode voltage range | 60kVpk | 60kVpk | 60kVpk | 60kVpk | 60kVpk | 60kVpk |
CableLength | 2 M (Std.) (customisable) | 2 M (Std.) (customisable) | 2 M (Std.) (customisable) | 2 M (hrs.) (customisable) | 2 M (hrs.) (customisable) | 2 M (Hrs) (customisable) |
Specification attenuators
Probe tip | Attenuation | Differential voltage range (MOIP100P/200P/350P) | Differential voltage range (MOIP500P) | Differential voltage range (800P/1000P) | Input impedance |
---|---|---|---|---|---|
OP20 | 2X/20X | ±2.5V / ±25V | ±1V / ±10V | ±1V / ±10V | 4.47 MΩ / 4 pF |
OP50 | 5X/50X | ±6.25V / ±62.5V | ±2.5V / ±25V | ±2.5V / ±25V | 4.19 MΩ / 2 pF |
OP100 | 10X/100X | - | ±5V / ±50V | - | 4.10 MΩ / 2 pF |
OP200 | 20X/200X | ±25V / ±250V | - | - | 9.03 MΩ / 2 pF |
OP1000 | 100X/1000X | ±125V / ±1250V | - | ± 50V / ± 500V | 20.94 MΩ / 1 pF |
OP2000 | 200X/2000X | ±250V/ ±2500V | ± 100V / ± 1000V | ± 100V / ± 1000V | 20.52 MΩ / 1 pF |
OP5000 | 500X/5000X | ±625V / ±6250V | ± 250V / ± 2500V | ± 250V / ± 2500V | 40.82 MΩ / 2.4 pF | 40.92 MΩ / 1 pF |
OP10000 | 1000X/10000X | N.A. | ± 500V / ± 5000V | ± 500V / ± 5000V | 40.82 MΩ / 2.4 pF |