CV characteristic testing and analysis of MOSFET devices
Parasitic capacitances generally refer to the capacitance characteristics of inductors, resistors, chip connectors and other components under high-frequency conditions.
At high frequencies, the equivalent capacitances caused by resistors, capacitors, inductors, diodes, transistors and especially MOSFETs can increase significantly and must not be neglected.
The parasitic capacitances of a MOSFET are dynamic parameters that directly influence the switching behavior of the device. Important parasitic parameters of power semiconductors include:
- Ciss input capacity
- Coss output capacity
- CRSS backfeed capacity
- Rg Gate series replacement resistor
These parameters must be precisely measured and analyzed both during research and development and in manufacturing .
Solution details
Test requirements:
Ciss – Input Capacity
By short-circuiting the drain and source, the capacitance between the gate and source is measured using an AC signal. This value corresponds to the input capacitance.
Coss – Output capacity
By short-circuiting the gate and source, the capacitance between drain and source is measured using an AC signal. This value corresponds to the output capacitance.
CRSS – Return transmission capacity
With a grounded source, the capacitance between drain and gate is measured. This value corresponds to the return transmission capacity.
Rg – Gate series replacement resistor
Measurement of the series equivalent resistance between gate and source.
Currently available solutions on the market for CV characteristic testing of semiconductors typically consist of several components, including:
- at least one measuring bridge
- a voltage source
- a DC bias measuring device
- a matrix switching system
- a control PC
- appropriate control and analysis software
The setup and commissioning of such systems are very complex. Furthermore, test stability is often limited.
The TH510 series semiconductor CV characteristic analyzer was specifically developed by Tonghui Electronics for the development and production of semiconductor materials and components.
The device features an integrated design and can display four parameters simultaneously. This allows a single measuring device to:
- Fast sorting and automated testing in production lines
- integrated testing processes
- Laboratory development and detailed analysis
The TH510 series features an integrated 1500 V high-voltage power supply with high measurement accuracy. Additionally, the system can be expanded to up to 6 channels , which is particularly important for the modular testing requirements of the IGBT industry .
List of instruments
- TH511