€18,999.00 Net
€22,608.81 incl. VAT
Delivery time: 1 week
.jpg){kind=icon}
.jpg){kind=icon}
.jpg)
.jpg)
.jpg)
.jpg)
- 2.5% advance payment discount
- If you use the payment method in advance by bank transfer, 2.5% of the purchase amount will be automatically deducted at the checkout.
Product configuration
Description
Wide-bandgap devices such as SiC and GaN switch in nanoseconds, bus voltages keep rising, and common-mode interference gets harder to control. Conventional high-voltage differential probes struggle to deliver bandwidth, common-mode rejection and safety at the same time.
The MOIP1200P solves this with full electrical isolation. The signal is converted from electrical to optical, sent over optical fiber, and converted back to electrical at the oscilloscope. The probe head runs on a laser-powered supply. There is no electrical connection between the device under test and the oscilloscope, so ground loops are eliminated.
It is the highest-bandwidth model in the Micsig MOIP series. Paired with a Micsig high-resolution oscilloscope, it forms a complete setup for high-voltage floating and isolated measurements.
Features
- Third-generation SigOFIT™ isolation: Electrical–optical–electrical conversion with fiber-optic transmission and a laser-powered supply fully isolates the device under test from the oscilloscope.
- 1.2 GHz bandwidth, ≤ 350 ps rise time: The highest bandwidth in the MOIP series, 20% more than the MOIP1000P.
- CMRR up to 180 dB: 180 dB at DC and still 106 dB at 1.2 GHz, to suppress high-frequency common-mode oscillation.
- 85 kVpk common-mode voltage: Combined with short leads and 1 pF input capacitance for safe testing of sensitive high-voltage nodes.
- ±0.01 V to ±20 kV differential range: The upper range is reached with optional attenuator heads. Noise floor below 0.45 mVrms, DC gain accuracy better than 1%.
- ADHOMT laser modulation: Analog–digital hybrid laser modulation with zero temperature drift. No manual calibration: power on and measure.
- Built for continuous operation: Supports 365 × 24 continuous testing.
- Standard BNC output: Compatible with oscilloscopes from all manufacturers.
Advantages
- 1.2 GHz bandwidth and ≤ 350 ps rise time capture the fastest switching edges of GaN devices.
- CMRR stays at 106 dB even at 1.2 GHz, so high-frequency common-mode oscillation is suppressed where it matters.
- Full optical isolation removes the electrical path between circuit and oscilloscope. 85 kVpk common-mode voltage leaves headroom as bus voltages rise.
- 1 pF input capacitance does not disturb sensitive nodes such as GaN gate drivers.
- One probe family covers ±0.01 V to ±20 kV with optional attenuator heads, with noise below 0.45 mVrms.
- Zero temperature drift and no manual calibration allow uninterrupted long-term monitoring.
- Standard BNC output works with the oscilloscopes you already have.
Application areas
- Design of motor drives and power converters
- Design of GaN, SiC, half/full bridge devices
- Design of inverters, UPS and switching power supplies
- Safety testing for high voltages and high bandwidths
- Evaluation of power devices
- Current shunt measurements
- EMI and ESD troubleshooting
- Floating measurements
Further information
CMRR
The SigOFIT probe has a high common mode rejection ratio (CMRR) of up to 108dB at 1GHz.
GaN suitable
The Micsig SigOFIT probes were developed specifically for GaN and similar applications. To meet the high requirements, the measuring leads are short and the input capacitance is less than 3pF input capacitance.
High accuracy
The SigOFIT probe has excellent amplitude-frequency characteristics and the accuracy of the DC gain is better than 1 %. The maximum noise floor within the range is <0.45 mVrms, and the zero drift is <0.1%.
For third generation semiconductors
SiC and GaN devices can switch high voltages in a few nanoseconds and the signal can exhibit high-energy, high-frequency harmonics.
Technical Data
| Model comparison | MOIP200P | MOIP350P | MOIP500P | MOIP1000P | MOIP1200P |
|---|---|---|---|---|---|
| Bandwidth | 200 MHz | 350 MHz | 500 MHz | 1GHz | 1.2 GHz |
| Rise time | ≤1.5ns | ≤1ns | ≤800ps | ≤450ps | ≤350ps |
| SMA input impedance | 1MΩ; || 10pF | 1MΩ; || 10pF | 1MΩ; || 10pF | 1MΩ; || 10pF | 1MΩ; || 10pF |
| Output voltage | ±1,25V | ±0,5V | ±0,5V | ±0,5V | ±0,5V |
| Differential voltage ranges | 20X: ±10V 50X: ±25V 100X: ±50 V1000X: ±500V 2000X: ±1000V 5000X: ±2500V | 20X: ±10V 50X: ±25V 100X: ±50V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V | 20X: ±10V 50X: ±25V 100X: ±50V1000X: ±500V 2000X: ±1000V 5000X: ±2500V 10000X: ±5000V | 20X: ±10V 50X: ±25V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V 10000X: ±5000V | 20X: ±10V 50X: ±25V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V 10000X: ±5000V |
| Noise | <0.3mVrms | <0.3mVrms | <0.3mVrms | <0.45mVrms | <0.45mVrms |
| Power supply | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V |
| DC amplification accuracy | 1 % | 1 % | 1 % | 1 % | 1 % |
| Common mode voltage range | 85kVpk | 85kVpk | 85kVpk | 85kVpk | 85kVpk |
| CableLength | 2m (customisable) | 2m (customisable) | 2m (customisable) | 2m (customisable) | 2m (customisable) |
Specification attenuators
| Probe tip | Attenuation | Differential voltage range (MOIP200P/350P/500P/1000P/1200P) | Input impedance |
|---|---|---|---|
| OP20 | 2X/20X | ±1V / ±10V | 4.47MΩ || ≤ 4pF |
| OP50 | 5X/50X | ±2.5V / ±25V | 4.19MΩ || ≤ 2pF |
| OP100 | 10X/100X | ±5V / ±50V | 4.10MΩ || ≤ 2pF |
| OP200 | 20X/200X | ±10V / ±100V | 8MΩ || ≤ 1pF |
| OP500 | 50X/500X | ±25V / ±250V | 5MΩ || ≤ 1pF |
| OP1000 | 100X/1000X | ±50V / ±500V | 20.94MΩ || ≤ 1pF |
| OP2000 | 200X/2000X | ± 100V / ± 1000V | 20.52MΩ || ≤ 1pF |
| OP5000 | 500X/5000X | ± 250V / ± 2500V | 40.82MΩ || ≤1pF |
| OP10000 | 1000X/10000X | ± 500V / ± 5000V | 40.82MΩ || ≤ 1pF |
| OP20000 | 2000X/20000X | ±1000V / ±10000V | 120 MΩ / 2 pF |
| OP30000 | 3000X/30000X | ±1500V / ±15000V | 180 MΩ / 1 pF |
| OP40000 | 4000X/40000X | ±2000V / ±20000V | 240 MΩ / 1 pF |
| OP5000-RF | 500X/5000X | ±250V / ±2500V |
Probe tips
Accesories